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| STS8C5H30L N-channel 30V - 0.018 - 8A/p-channel 30V - 0.045 - 5A - SO-8 Low gate charge STripFETTM III MOSFET Features Type STS8C5H30L(N-channel) STS8C5H30L(P-channel) VDSS 30V 30V RDS(on) <0.022 <0.056 ID 8A 5A S0-8 Conduction losses reduced Switching losses reduced Low threshold drive Standard outline for easy automated surface mount assembly SO-8 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram Application Switching application Table 1. Device summary Part number Marking S8C5H30L Package SO-8 Packaging Tape & reel STS8C5H30L Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed July 2007 Rev 4 1/14 www.st.com 14 Contents STS8C5H30L Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STS8C5H30L Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) PTOT Tstg Tj Absolute maximum ratings Value Parameter N-channel Drain-source voltage (vgs = 0) Gate- source voltage Drain current (continuos) at TC = 25C single operating Drain current (continuos) at TC = 100C single operating Drain current (pulsed) Total dissipation at TC = 25C dual operating Total dissipation at TC = 25C single operating Storage temperature Operating junction temperature 16 8 6.4 32 1.6 2 -55 to 150 150 30 16 4.2 3.1 16.8 P-channel V V A A A W W C C Unit 1. Pulse width limited by safe operating area Table 3. Thermal data Thermal resistance junction-ambient single operating Thermal resistance junction-ambient dual operating Maximum lead temperature for soldering purpose 62.5 78 300 C/W C/W C Rthj-a Tl Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed 3/14 Electrical characteristics STS8C5H30L 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS=Max rating, TC=125C VGS = 16V VGS = 16V VDS = VGS, ID = 250A VGS = 10V, ID = 4A VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 4A VGS = 4.5V, ID = 2.5A n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch 1 1 1.6 0.018 0.045 0.020 0.070 Min. 30 30 1 10 100 100 2.5 0.022 0.055 0.025 0.075 Typ. Max. Unit V V A A nA nA V V IDSS IGSS VGS(th) RDS(on) Static drain-source on resistance Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge N-channel VDD=24V ID=8A VGS=5V P-channel VDD = 24V ID = 4A VGS= 5V (see Figure 27) VDS = 25V, f = 1 MHz, VGS = 0 Test conditions VDS = 15V, ID= 4A VDS = 15V, ID= 2.5A n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch Min. Typ. 8.5 10 857 1350 147 490 20 130 7 12.5 2.5 5 2.3 3 10 16 Max. Unit S S pF pF pF pF pF pF nC nC nC nC nC nC 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5. Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed 4/14 STS8C5H30L Table 6. Symbol Electrical characteristics Switching times Parameter Test conditions N-channel VDD = 15V, ID = 4A , RG=4.7 VGS = 4.5V P-channel VDD = 15V, ID = 2A , RG=4.7 VGS = 4.5V (see Figure 26) N-channel VDD = 15V, ID = 4A , RG=4.7 VGS = 4.5V P-channel VDD = 15V, ID = 2A , RG=4.7 VGS = 4.5V (see Figure 26) Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time n-ch p-ch n-ch p-ch 12 25 14.5 35 ns ns ns ns td(off) tf Turn-off delay time Fall time n-ch p-ch n-ch p-ch 23 125 8 35 ns ns ns ns Table 7. Symbol ISD ISDM (1) VSD (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 8A, VGS = 0 ISD = 5A, VGS = 0 N-channel ISD = 8A, di/dt = 100A/s VDD=15 V,Tj =150 oC P-channel ISD = 5 A, di/dt = 100A/s VDD=15 V, Tj =150 oC (see Figure 28) Test conditions n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch 15 45 5.7 36 0.76 1.6 Min Typ. Max 8 5 32 20 1.5 1.2 Unit A A A A V V ns ns nC nC A A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 5/14 Electrical characteristics STS8C5H30L 2.1 Figure 2. Electrical characteristics (curves) Safe operating area n-ch Figure 3. Thermal impedance n-ch Figure 4. Output characteristics n-ch Figure 5. Transfer characteristics n-ch Figure 6. Transconductance n-ch Figure 7. Static drain-source on resistance nch 6/14 STS8C5H30L Figure 8. Gate charge vs. gate-source voltage Figure 9. n-ch Electrical characteristics Capacitance variations n-ch Figure 10. Normalized gate threshold voltage vs. temperature n-ch Figure 11. Normalized on resistance vs. temperature n-ch Figure 12. Source-drain diode forward characteristics n-ch Figure 13. Normalized breakdown voltage vs. temperature n-ch 7/14 Electrical characteristics Figure 14. Safe operating area p-ch STS8C5H30L Figure 15. Thermal impedance p-ch Figure 16. Output characteristics p-ch Figure 17. Transfer characteristics p-ch Figure 18. Transconductance p-ch Figure 19. Static drain-source on resistance pch 8/14 STS8C5H30L Electrical characteristics Figure 20. Gate charge vs. gate-source voltage Figure 21. Capacitance variations p-ch p-ch Figure 22. Normalized gate threshold voltage vs. temperature p-ch Figure 23. Normalized on resistance vs. temperature p-ch Figure 24. Source-drain diode forward characteristics p-ch Figure 25. Normalized breakdown voltage vs. temperature p-ch 9/14 Test circuit STS8C5H30L 3 Test circuit Figure 27. Gate charge test circuit Figure 26. Switching times test circuit for resistive load Figure 28. Test circuit for inductive load Figure 29. Unclamped Inductive load test switching and diode recovery times circuit Figure 30. Unclamped inductive waveform Figure 31. Switching time waveform 10/14 STS8C5H30L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STS8C5H30L SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 12/14 STS8C5H30L Revision history 5 Revision history Table 8. Date 17-Sep-2004 31-Oct-2006 30-Jan-2007 23-Jul-2007 Revision history Revision 1 2 3 4 First revision The document has been reformatted typo mistake on Table 2. Figure 14 has been updated Changes 13/14 STS8C5H30L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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